We are focusing on the design and development of chemical vapor deposition (CVD), atomic layer deposition (ALD), and related technologies. Based
on kinetic investigation on film growth and with the aid of computer simulation, we have extracted major reaction
mechanism and rate constants to design CVD processes. We are also working on process development of supercritical
fluid deposition (SCFD) techniques. The research subjects are as follows.
a) Process development of CVD and ALD for highly reliable ULSI interconnects.
b) Development of novel deposition methods for MEMS/NEMS applications using SCFD.
c) Kinetic study on InGaN/GaN MOVPE process using selective area growth for LEDs.
c) Computer assisted reaction/reactor design (CARD) for SiC-based ceramic matrix composites fabrication.

K. Shima, N. Sato, Y. Funato, Y. Fukushima, T. Momose, and Y. Shimogaki,
“Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels”
Jpn. J. Appl. Phys., 56, 06HE02 (2017).
K. Shima, Y. Funato, H. Sugiura, N. Sato, Y. Fukushima, T. Momose, and Y. Shimogak,
“High-Aspect-Ratio Parallel-Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition”
Adv. Mater. Interfaces, 1600254 (2016).
T. Momose, T. Kamiya, Y. Suzuki, S. Ravasio, C. Cavallotti, M. Sugiyama, and Y. Shimogakia
“Kinetic Analysis of GaN-MOVPE via Thickness Profiles in the Gas Flow Direction with Systematically Varied Growth Conditions”
ECS J. Solid State Science and Technology, 5, P164-P171 (2016).