Material engineering to design the properties of nano-scaled functional ultrathin films on wide variety of semiconductors is now having a crucially important role in the development of future electron devices. The functionality design of hetero-interfaces among those materials through the control of physical and electrical properties in nanospace near the interface is one of the key issues. My research goal is to design of the materials and their stacks toward highly-efficient energy conversion devices and advanced electron devices.

a) Designing process technologies to control the properties of dielectric/semiconductor interfaces for SiC and other widegap semiconductor-based high performance power devices.
b) Designing the dielectric properties of metal oxide thin films and the functionalities of their interfaces for the gate stacks of advanced CMOS devices.
c) Designing the ferroelectric properties of oxide nano thin films for the future advanced memory devices.

1. S. Niitayakasetwat, H. Momiyama and K. Kita,”Structural distortion in ferroelectric HfO2 – The factor that determines electric field-induced phase transformation”, Solid-State Electronics, 204 (2023) 108639
2. T. H. Kil and K. Kita, “Anomalous band alignment change of SiO2/4H-SiC (0001) and (000-1) MOS capacitors induced by NO-POA and its possible origin, Appl. Phys. Lett., 116, (2020) 122103
3. H. Hirai and K. Kita, “Difference of near-interface strain in SiO2 between thermal oxides grown on 4H-SiC by dry-O2 oxidation and H2O oxidation characterized by infrared spectroscopy”, Appl. Phys. Lett. 110 (2017)152104
4. R. H. Kikuchi and K. Kita, “Fabrication of SiO2/4H-SiC (0001) Interface with Nearly ideal Capacitance-Voltage Characteristics by Thermal Oxidation”, Appl. Phys. Lett. 105 (2014) 032106