Yuki tokumoto Lecturer
+81-3-5452-6324 | |
+81-3-5452-6326 | |
tokumoto[at]iis.u-tokyo.ac.jp
* In your correspondence, please replace [at] with "@" in the above email address. |
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http://www.tokumoto.iis.u-tokyo.ac.jp/ | |
physical properties of dislocations, dynamic properties of dislocations, defect characterization |
Research
Basic researches on physical properties of dislocations and related defects in crystals are conducted. Current topics under investigation are as follows:<br>
a) Electrical properties of dislocations in topological insulators<br>
b) Structural analysis of defects in III-Nitride semiconductors<br>
c) Electrical and optical properties of dislocations in semiconductors
主要研究論文
Y. Hattori, Y. Tokumoto, and K. Edagawa: "Optimizing composition of Pb(Bi1−xSbx)2Te4 topological insulator to achieve a bulk-insulating state", Phys. Rev. Mater., 1 (2017) 074201.
H. Hamasaki, Y. Tokumoto, and K. Edagawa: "Dislocation conduction in Bi-Sb topological insulators", Appl. Phys. Lett., 110 (2017) 092105.
Y. Tokumoto, K. Kutsukake, Y. Ohno, and I. Yonenaga: "Dislocation structure in AlN films induced by in situ TEM nanoindentation", J. Appl. Phys. 112 (2012) 093526.