Yuki tokumoto Lecturer

TEL +81-3-5452-6324
FAX +81-3-5452-6326
tokumoto[at]iis.u-tokyo.ac.jp

* In your correspondence, please replace [at] with "@" in the above email address.

研究室 http://www.tokumoto.iis.u-tokyo.ac.jp/
研究分野 physical properties of dislocations, dynamic properties of dislocations, defect characterization

Research

Basic researches on physical properties of dislocations and related defects in crystals are conducted. Current topics under investigation are as follows:<br>
a) Electrical properties of dislocations in topological insulators<br>
b) Structural analysis of defects in III-Nitride semiconductors<br>
c) Electrical and optical properties of dislocations in semiconductors

主要研究論文

Y. Hattori, Y. Tokumoto, and K. Edagawa: "Optimizing composition of Pb(Bi1−xSbx)2Te4 topological insulator to achieve a bulk-insulating state", Phys. Rev. Mater., 1 (2017) 074201.
H. Hamasaki, Y. Tokumoto, and K. Edagawa: "Dislocation conduction in Bi-Sb topological insulators", Appl. Phys. Lett., 110 (2017) 092105.
Y. Tokumoto, K. Kutsukake, Y. Ohno, and I. Yonenaga: "Dislocation structure in AlN films induced by in situ TEM nanoindentation", J. Appl. Phys. 112 (2012) 093526.