Koji Kita Associate Professor

TEL +81-3-5841-7164
FAX +81-3-5841-7164
kita[at]scio.t.u-tokyo.ac.jp

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研究室 http://www.scio.t.u-tokyo.ac.jp/top-eng.html
研究分野 advanced semiconductor devices, oxide thin films, widegap semiconductors, interfaces

Research

Material engineering to design the properties of nano-scaled functional ultrathin films of insulators and metals on wide variety of semiconductors is now having a crucially important role in the development of future electron devices. Especially, the functionality design of hetero-interfaces among those materials is one of the key issues. My research goal is to design the electric / magnetic / optic functions of the materials and their stacks toward highly-efficient energy conversion devices and ultra-low power consuming nano-electron devices.
a) Designing process technologies to control the properties of dielectric/semiconductor interfaces for SiC and other widegap semiconductor-based high performance power devices.
b) Designing the dielectric properties of metal oxide thin films for the gate stacks of advanced CMOS devices etc. by the control of interface properties.
c) Designing the interface between ultrathin dielectric and ferromagnetic layers to enhance the voltage control of magnetism.

主要研究論文

H. Hirai and K. Kita, "Difference of near-interface strain in SiO2 between thermal oxides grown on 4H-SiC by dry-O2 oxidation and H2O oxidation characterized by infrared spectroscopy", Appl. Phys. Lett. 110 (2017)152104
R. H. Kikuchi and K. Kita, "Fabrication of SiO2/4H-SiC (0001) Interface with Nearly ideal Capacitance-Voltage Characteristics by Thermal Oxidation", Appl. Phys. Lett. 105 (2014) 032106
K. Kita, D. W. Abraham, M. J. Gajek, and D. C. Worledge, "Electric-Field-Control of Magnetic Anisotropy of Co0.6Fe0.2B0.2/Oxide Stacks Using Reduced Voltage", J. Appl. Phys. 112 (2012) 033919
K. Kita and A. Toriumi, "Origin of Electric Dipoles Formed at High-k/SiO2 Interface", Appl. Phys. Lett. 94 (2009) 132902