Kosuke Nagashio Professor

TEL +81-3-5841-7161
FAX +81-3-5841-7161

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研究室 http://webpark1753.sakura.ne.jp/nagashio_lab_E/
研究分野 2D materials, layered heterostructure, electronic transport properties, crystal growth


We focus on 2-dimensional (2D) layered electronic devices as one of the most promising future options to enhance the device performance. Although 2D heterointerface is ideally expected to be electrically inert, the superior interface properties are blinded by the imperfection of 2D materials and the interaction with the surroundings. The key to improve the properties is to understand the interface properties between 2D layered materials and the surroundings and to control them from the viewpoint of material science as well as device physics.


N. Higashitarumizu, H. Kawamoto, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno, and K. Nagashio, "Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation", Nanoscale, 2018, 10, 22474 – 22483
N. Fang, and K. Nagashio, "Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule", ACS appl. mater. interfaces, 2018, 10, 32355-32364.
T. Uwanno, T. Taniguchi, K. Watanabe, & K. Nagashio, "Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs", ACS appl. mater. interfaces, 2018, 10, 28780-28788.
R. Matsuoka, R. Sakamoto, K. Hoshiko, S. Sasaki, H. Masunaga, K. Nagashio, and H. Nishihara, "Crystalline graphdiyne nanosheets produced at a gas/liquid or liquid/liquid interface", J. Am. Chem. Soc., 2017, 139, 3145.
Y. Hattori, K. Watanabe, T. Taniguchi, and K. Nagashio, "Layer-by-layer dielectric breakdown of hexagonal boron nitride", ACS nano, 2015, 9, 916.