Takeshi Yoshikawa Associate Professor

Research

My research subject is the high-temperature materials processing for ferrous, non-ferrous and advanced materials. Research background is in physical chemistry and crystal growth, which are utilized for the optimization and the innovation of the processes. Followings are the typical research topics.
a) Solution growth of semiconductor materials such as silicon, silicon carbide (SiC) & aluminum nitride (AlN)
b) Real-time observation of reacting solid/liquid & liquid/liquid interface at high temperature
c) Equilibrium and non-equilibrium reaction between slag and metal
d) Interface science of high temperature materials (surface energy, interfacial energy and nucleation)

主要研究論文

Y. Ninomiya, H. Sasaki, T. Yoshikawa, M. Maeda: “Direct Observation of Pure Cu and Cu-Ag Anode Passivation in H2SO4-CuSO4 Aqueous Solution by Channel Flow Double Electrode and Optical Microscopy”, Metallurgical and Materials Transactions B 50(1) (2018) 407–415.
H. Daikoku, S. Kawanishi, T. Yoshikawa: “Mechanism of Replicating Polytype of 4H-SiC by Solution Growth on Concave Surface”, Crystal Growth & Design 18(7) (2018) 3820–3826.
S. Kawanishi, T. Yoshikawa: “In Situ Interface Observation of 3C-SiC Nucleation on Basal Planes of 4H-SiC During Solution Growth of SiC from Molten Fe-Si Alloy”, The Journal of The Minerals, Metals & Materials Society 70(7) (2018) 1239–1247.
T. Narumi, Y. Shibuta, T. Yoshikawa: “Molecular Dynamics Simulation of Interfacial Growth of SiC from Si-C Solution on Different Growth Planes”, Journal of Crystal Growth 494 (2018) 36–43.