Akira Toriumi Professor

TEL +81-3-5841-7120
FAX +81-3-5841-7158
toriumi[at]material.t.u-tokyo.ac.jp

* In your correspondence, please replace [at] with "@" in the above email address.

研究室 http://www.adam.t.u-tokyo.ac.jp/
研究分野 high-performance electron devices (Ge, Si, graphene, high-k dielectrics and functional oxides)

Research

We are studying high performance and functional electron devices using new materials. Particularly, understanding
and control of hetero-interfaces between different materials are our fun.
a) High-k Dielectrics for Advanced CMOS -Interface Control & Material Scienceb
b) Graphene FETs - Transport and Interface Reactions -
c) Ge Gate Stacks - Challenge to High-Performance Ge CMOS -
d) Conductivity Control of Transition Metal Oxides - Gate Controlled Nonlinear Resistor -

主要研究論文

1) T. Nishimura, C. H. Lee, K. Nagashio, and A. Toriumi, "Step and
Terrace Formation on Ge(111) Surface in H2 Annealing," Applied
Physics Express 5 (2012) 121301.
2) C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi,
"Oxidation Rate Reduction of Ge with O2 Pressure Increase," Applied
Physics Express, 5 (2012)114001.
3) T. Tabata, K. Nagashio, and A. Toriumi, "Effect of High-Pressure Inert
Gas Annealing on AlON/Ge Gate Stacks," Applied Physics Express, 5
(2012) 091002.